Method and system for monitoring implantation of ions into semiconductor substrates
US6844208B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2003 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Jun 12, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for monitoring a dose of a silicon bearing implant is described. The method includes introducing a first implant species through a surface of a semiconductor substrate at a first does of energy level and introducing a silicon bearing species through the surface of the semiconductor substrate at a second dose and a second energy level. The method anneals the semiconductor substrate and measures a sheet resistance value of the surface of the semiconductor substrate. The method also determines the second dose value based upon the surface resistance value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.