LSI device polishing composition and method for producing LSI device
US6844263B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2003 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Feb 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.