Magnetic memory using perpendicular magnetization film
US6844605B2 · kind B2 · utility
17Cited by
5References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 27, 2002 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Nov 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/16
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a magnetoresistive element of a magnetic memory, a inversion field Hc of at least a first magnetic layer is given by where Ku and Ms are the perpendicular magnetic anisotropy constant and saturation magnetization of the first magnetic layer. The inversion field Hc is set smaller than a magnetic field generated by a magnetic field generation mechanism. Letting T be the film thickness of the first magnetic layer and W be the width and length, f is a factor given byf=7×10−13(T/W)4−2×10−9(T/W)3+3×10−6(T/W)2−0.0019(T/W)+0.9681A magnetic memory manufacturing method is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.