Semiconductor integrated circuit
US6844614B2 · kind B2 · utility
2Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2003 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Oct 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit has a P-channel FET and a diode. The FET and the diode are mounted on a single island of a lead frame so that a drain of the transistor and a cathode of the diode have a common electrical potential. The island is depressed, and a non-chip-mounted surface of the island is exposed from the undersurface of a package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.