Method and circuit for eliminating charge injection from transistor switches
US6844759B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 10, 2003 |
| Grant date | Jan 18, 2005 |
| Priority date | — |
| Expiry date | Jun 10, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C27/028
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for reducing charge injection from a field effect transistor switch in a circuit being controlled by a timing signal having an operation cycle with at least a first phase and a second phase. A charge density is changed in at least one layer in a channel in the switch when the timing signal begins its operational cycle and is in the first phase. A depth of the layer is significantly reduced while the timing signal is still in the first phase before a transition of the timing signal from the first phase to the second phase. The timing signal is transitioned from the first phase to the second phase while the layer is significantly reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.