Epitaxial CoSi2 on MOS devices
US6846359B2 · kind B2 · utility
2Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2002 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Jan 22, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An SixNy or SiOxNy liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi2 layer underneath the liner. The CoSi2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi2 layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.