Patent · US Expired

Silicon nanoparticle and method for producing the same

US6846474B2 · kind B2 · utility

26Cited by
22References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 7, 2003
Grant dateJan 25, 2005
Priority date
Expiry dateMay 13, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/3031
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Highly uniform 1 nm silicon nanoparticles are provided by the invention. The nanoparticles exhibit beneficial properties. They are a source of stimulated emissions. They may be suspended in liquids, and solids. They can be formed into crystals, colloids and films. The nanoparticles of the invention are about 1 nm having about only one part in one thousand greater than 1 nm. A method for producing the silicon nanoparticle of the invention is a gradual advancing electrochemical etch of bulk silicon. Separation of nanoparticles from the surface of the silicon may also be conducted. Once separated, various methods may be employed to form plural nanoparticles into colloids, crystals, films and other desirable forms. The particles may also be coated or doped.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.