Method for fabricating a silicon thin-film
US6846513B2 · kind B2 · utility
13Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2001 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Dec 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of forming a silicon thin-film which comprises a step of arranging in one or more parts of a liquid arranging surface liquid which contains a silicide comprising ring silane and/or a derivative thereof, such ring silane comprising silicon and hydrogen, and a step of forming a silicon thin-film by vaporizing silicide from liquid and supplying the silicide to a thin-film-forming surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.