Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
US6846515B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2002 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Dec 11, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/401
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for providing a porous organosilica glass (OSG) film that consists of a single phase of a material represented by the formula SivOwCxHyFz, v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6 is disclosed herein. In one aspect of the present invention, the film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or alternatively bonded to, the precursors. The porogens are subsequently removed to provide the porous film. In another aspect of the present invention, porogenated precursors are used for providing the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.