Photomask inspecting method
US6846597B2 · kind B2 · utility
9Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2002 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Mar 19, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A photomask with a dummy pattern is inspected in a predetermined detection sensitivity by using photomask pattern data designating a photomask with a dummy pattern to detect defects in the photomask. Coordinates indicating the positions of the defects are also determined. The defects in a design pattern area and those in a dummy pattern area are discriminated by using defect-discriminating data. The defects in the design pattern area and those in the dummy pattern area are examined on the basis of respective inspection specifications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.