Voltage limited EEPROM device and process for fabricating the device
US6846714B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2002 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Oct 10, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An EEPROM device having voltage limiting charge pumping circuitry includes charge pumping circuitry that limits the voltage supplied to the high voltage transistors to levels below the breakdown field of the tunnel oxide layer. The EEPROM device includes a substrate having a programming region, a tunnel region, a sensing region, and a low voltage region. A first oxide layer having a first thickness overlies the tunnel region and the sensing region. A second oxide layer having a second thickness overlies the low voltage region. The first oxide thickness is greater than the second oxide thickness. A charge pumping circuit is coupled to the programming region and to the tunnel region. The charge pumping circuit impresses a voltage level across the first oxide layer that is below the field breakdown voltage of first oxide layer. A process for fabricating the device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.