Light-emitting device and method for manufacturing the same
US6847046B1 · kind B1 · utility
6Cited by
4References
18Claims
0Family size
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Key dates
| Filing date | Dec 31, 2003 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Dec 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting device and a method for manufacturing the same are described, by forming a SiN/Al1-x-yInxGayN(0≦x≦1, 0≦y≦1, x+y≦1) superlattice layer between a substrate and an undoped GaN as a buffer layer, so as to reduce dislocation density of the buffer layer. In the SiN/Al1-x-yInxGayN(0≦x≦1, 0≦y≦1, x+y≦1) superlattice layer, Al1-x-yInxGayN(0≦x≦1, 0≦y≦1, x+y≦1) can be n-type, p-type or undoped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.