Semiconductor device
US6847066B2 · kind B2 · utility
49Cited by
27References
23Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 8, 2001 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Aug 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film passive element includes at least one of a capacitance element having a plurality of conductive layers and a dielectric material layer and an inductance element formed of a patterned conductive layer is stacked on a circuit element-forming region of a semiconductor substrate provided with a plurality of connection pads and is connected to the circuit element of the circuit element-forming region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.