Five transistor CMOS pixel
US6847070B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 9, 2003 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Mar 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/623
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of sensing radiation in a pixel includes applying a transfer clock signal, applying a pixel reset clock signal, and applying a pixel reset voltage. The applying a transfer clock signal applies the transfer clock signal to a gate electrode of a transfer gate transistor. The applying a pixel reset clock signal applies the pixel reset clock signal to a gate electrode of the pixel reset transistor. The applying a pixel reset voltage applies the pixel reset voltage to a drain of the pixel reset transistor. The method further includes switching the transfer clock signal to a high state, switching the pixel reset clock signal to a high state, switching the pixel reset voltage to a low state, switching the pixel reset voltage to a high state, and switching the pixel reset clock signal to a low state at a beginning of an integration cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.