Self light-emitting device using an inert gas
US6847163B1 · kind B1 · utility
63Cited by
9References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 25, 2000 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Nov 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer (102) is sandwiched between a transparent electrode (103) and a catrode (101), a film thickness of the EL layer (102) and a film thickness of the transparent electrode (102) are equivalent to the film thicknesses in which there is no occurrence of a guided light, and an inert gas is filled in a space between the transparent electrode (103) and a cover material (105).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.