Self-sustained pulsating laser diode
US6847666B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2001 |
| Grant date | Jan 25, 2005 |
| Priority date | — |
| Expiry date | Dec 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2226
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A self-sustained pulsating laser diode in which a region in an active layer functions as a saturable absorber has at least five and no more than ten quantum wells, p-type cladding layer flat part with a layer thickness of at least 300 nm and no greater than 500 nm, and a p-type cladding layer flat part with a carrier density of at least 1×1017 cm−3 and no greater than 5×1017 cm−3. This laser diode achieves a sufficiently small current distribution compared with the light distribution in the lateral direction, thereby enabling stable self-sustained pulsating operation up to a high temperature, which was difficult to achieve in the past.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.