Magnetic tunneling junction and fabrication method thereof
US6848169B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2002 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Jun 28, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49044
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A fabrication method of a magnetic tunnel junction includes the steps of: forming a magnetic tunnel junction constructed having a first magnetic layer, a tunnel barrier formed at an upper surface of the first magnetic layer and a second magnetic layer formed at an upper surface of the tunnel barrier; and thermally treating the junction rapidly for 5 seconds˜10 minutes at a temperature of 200˜600° C. to re-distribute oxygens in the tunnel barrier and make the interface between the tunnel barrier and the magnetic layer to be even. The tunneling magnetoresistance and thermal stability of the magnetic tunnel junction can be improved through the rapid thermal annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.