Polishing composition
US6849099B2 · kind B2 · utility
12Cited by
10References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Sep 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
There is provided a polishing composition that reduces erosion and is used in a final polishing step of a semiconductor device manufacturing process. The polishing composition contains colloidal silica, a periodic acid compound, ammonia, ammonium nitrate and water and its pH is 1.8 to 4.0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.