Indium-tin oxide (ITO) layer and method for producing the same

US6849165B2 · kind B2 · utility

Assignee

• Unaxis Deutschland GmbH · DE

Inventors

• Andreas Klöppel · Glauburg, DE
• Jutta Trube · Mömbris, DE

Key dates

• Filing date: May 4, 2001
• Grant date: Feb 1, 2005
• Expiry date: May 4, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/265
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 μΩcm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined HF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering, as well as ITO-films with the above-named characteristics.