Photosensitive polymers, resist compositions comprising the same, and methods for forming photoresistive patterns
US6849378B2 · kind B2 · utility
10Cited by
2References
39Claims
0Family size
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Key dates
| Filing date | Apr 17, 2002 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Nov 12, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer includes a comonomer having an acid-labile substituent group or a polar functional group, and a copolymer of alkyl vinyl ether and maleic anhydride. The copolymer is represented by the following structure: where k is an integer of 3 to 8, and where X is tertiary cyclic alcohol having 7 to 20 carbon atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.