Method for manufacturing a semiconductor device that includes planarizing with a grindstone that contains fixed abrasives
US6849542B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 18, 2002 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Nov 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The invention provides a method for manufacturing a semiconductor device with reduced dishing and erosion. In this method for manufacturing a semiconductor device, the convex/concave pattern is planarized by relatively moving a substrate having the convex/concave pattern on the surface and a polishing tool with pressing the convex/concave surface of the substrate on the polishing tool. The polishing tool is provided with a grindstone 10 having a plurality of polygonal segments 20, which comprises abrasive 23 that is bonded together with resin 24 and contains pores 22. The polygonal segments are arranged so that corners of three or more polygonal segments are not located near each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.