Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor, and radiation-emitting semiconductor chip

US6849878B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Stefan Bader · Fort Collins, US
• Michael Fehrer · Bad Abbach, DE
• Berthold Hahn · Hemau, DE
• Volker Harle · Hemau, DE
• Hans-Jürgen Lugauer · Sinzing, DE

Key dates

• Filing date: Feb 28, 2003
• Grant date: Feb 1, 2005
• Expiry date: Mar 31, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/34333
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III-V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.