Flash memory with UV opaque passivation layer
US6849896B2 · kind B2 · utility
1Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2001 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Nov 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a flash memory having a passivation layer that is not transparent to ultraviolet light. The method forming a semiconductor that includes flash memory cell having floating gate, then forming a the substrate. Process induced charge that has accumulated on the flash cell floating gate is then neutralized and a passivation layer, which is no transparent to ultraviolet light, is formed on the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.