Vertical transistor comprising a mobile gate and a method for the production thereof
US6849912B2 · kind B2 · utility
5Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2001 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Aug 5, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/124
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
What is proposed is a vertical field effect transistor produced from a semiconductor wafer, comprising a residual transistor composed of a source zone, a channel zone and a drain zone, as well as a movable gate structure disposed by means of at least one flexible suspension in front of said channel zone and spaced therefrom, which is characterized by the provision that the movable gate structure consists of the material of said semiconductor wafer. The suspensions of the movable structure preferably present a high ratio of their height to their width, such that the movable gate may preferably move in the wafer plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.