Photovoltaic element
US6849917B2 · kind B2 · utility
6Cited by
3References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 17, 2003 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Mar 17, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
In a photovoltaic element obtained by forming an ITO film, that is a transparent conductive film, on a semiconductor layer composed of an n-type silicon wafer, an i-type amorphous silicon hydride layer and a p-type amorphous silicon hydride layer, the ITO film has an interface layer as an alkali diffusion prevention region on a side adjacent to the semiconductor layer, and a bulk layer layered on the interface layer. The crystallinity of the interface layer is made lower than that of the bulk layer by changing the water partial pressure when forming the interface layer and the bulk layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.