Wide band cross point switch using MEMS technology
US6849924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2002 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Feb 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30111
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A multilayer switching assembly for switching high frequency signals has MEMS structures on a ceramic substrate having a top surface, a bottom surface and a plurality of insulating layers. The insulating layers are separated by a first conductor and a second conductor. The first conductor is connected to a ground potential. The second conductor is separated from the first conductor by one of the insulating layers. The second conductor presents a specific impedance (50 ohms) with respect to the first conductor to high frequency signals traveling on the second conductor.64 MEMS structures are mounted on the top surface. Each MEMS has an input, an output, and a control. The input connected to the second conductor. The output is connected to a coplanar waveguide placed on the top surface. The control is connected to the bottom surface.The input to each MEMS is electrically shielded from the output and from the control by a third conductor connected to the first (grounded) conductor. The third conductor traverses one or more of the insulating layers thereby acting as a shield and precluding the high frequency signals presented to the input from propagating to the output and to the contr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.