Electric-optic device, method of fabricating the same, and electronic apparatus
US6850292B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 27, 1998 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Dec 27, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a TFT active matrix electro-optical device, the pixel-aperture ratio is increased while a pixel electrode and a semiconductor layer are interconnected, and a high resolution image can be displayed, with a relatively simple structure. For that purpose, the electro-optical device includes a TFT array substrate provided with a TFT, a data line, a scanning line, a capacitor line, and a pixel electrode. The pixel electrode and the TFT are electrically connected to each other, and are interconnected by a first barrier layer through contact holes. A second barrier layer is formed broader than the data line, and a portion of the second barrier layer overlaps the pixel electrode, and thus the pixel-aperture region is delimited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.