System for chemical vapor deposition at ambient temperature using electron cyclotron resonance and method for depositing metal composite film using the same
US6851939B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2002 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Apr 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system for chemical vapor deposition at ambient temperature using electron cyclotron resonance (ECR) comprising: an ECR system; a sputtering system for providing the ECR system with metal ion; an organic material supply system for providing organic material of gas or liquid phase; and a DC bias system for inducing the metal ion and the radical ion on a substrate is provided, and a method for fabricating metal composite film comprising: a step of providing a process chamber with the gas as plasma form using the ECR; a step of providing the chamber with the metal ion and the organic material; a step of generating organic material ion and radical ion by reacting the metal ion and the organic material with the plasma; and a step of chemically compounding the organic material ion and the radical ion after inducing them on a surface of a specimen is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.