Method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer
US6852643B1 · kind B1 · utility
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2References
7Claims
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Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Sep 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3063
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer, comprising steps of: placing a wafer after the pre-etching process into an alcohol solution for activating the surface of wafer and into an ammonium fluoride solution as an etching solution; and illuminating the back of wafer with a halogen light and performing a photoelectrochemical etching process in a potentiostatic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.