Method and apparatus for nanometer-scale focusing and patterning of ultra-low emittance, multi-MeV proton and ion beams from a laser ion diode
US6852985B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Feb 5, 2003 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Apr 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J27/24
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for focusing proton and ion beams within the profile of the beam envelope of an ultra-low emittance, charge neutralized emission to create a pattern without focusing the entire beam envelope or rastering. In one implementation, a method for use with laser accelerated ion beams comprises the steps: irradiating a surface of a target with pulsed laser irradiation to produce an electron plasma emission on a non-irradiated surface of the target, the electron plasma emission producing an ion beam emission on the non-irradiated surface, the ion beam emission having a beam envelope; and focusing ions of the ion beam emission into a plurality of component beams within the beam envelope as a result of the shape of the non-irradiated surface of the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.