Field effect transistor (FET) and FET circuitry

US6852995B1 · kind B1 · utility

Assignee

• THE UNIVERSITY OF LIVERPOOL · GB

Inventors

• William Eccleston · Liverpool, GB
• Giles Lloyd · Liverpool, GB

Key dates

• Filing date: Nov 9, 2000
• Grant date: Feb 8, 2005
• Expiry date: Nov 9, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/466

Abstract

A polymer-based or silicon-based accumulation type, depletion mode field effect transistor, suitable as a driver for load. Optionally, the load is another accumulation type, depletion mode field effect transistor. The transistor may be of the TFT type, either lateral or vertical. Optionally, it may have Schottky diode contacts to source and drain electrodes, possibly with a reverse biased Schottky junction, or it may have a negatively charged gate dielectric.