Silicon carbide semiconductor device
US6853006B2 · kind B2 · utility
18Cited by
0References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 31, 2003 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Jul 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A silicon carbide (SiC) substrate is provided with an off-oriented {0001} surface whose off-axis direction is <11-20>. A trench is formed on the SiC to have a stripe structure extending toward a <11-20> direction. An SiC epitaxial layer is formed on an inside surface of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.