AlGaInP light emitting diode
US6853012B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2002 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Mar 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
Abstract
An AlGaInP light emitting diode with improved illumination is provided. The AlGaInP light emitting diode includes a semiconductor substrate, a light re-emitting layer, an AlGaInP layer with a first doping concentration, an AlGaInP lower cladding layer with a second doping concentration less than the first doping concentration, an undoped AlGaInP active layer, an AlGaInP upper cladding layer, a window layer, an annular-shaped top electrode on the window layer and a layered electrode on a bottom of the semiconductor substrate. The light re-emitting layer includes at least a first region formed of the light re-emitting layer and a second region formed of Al2O3 enclosing the first region. Since AlGaInP layer between the AlGaInP lower cladding layer and the light re-emitting layer has the first doping concentration larger than that of the AlGaInP lower cladding layer, the AlGaInP layer provides a transverse current spreading. The Al2O3 region also improves light reflection illuminating on the light re-emitting layer. As a result, the brightness performance of the light emitting diode is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.