Power MOSFET having enhanced breakdown voltage
US6853033B2 · kind B2 · utility
25Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2002 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Jun 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET includes a dielectric, preferably in the form of a metal thick oxide that extends alongside the MOSFET's drift region. A voltage across this dielectric between its opposing sides exerts an electric field into the drift region to modulate the drift region electric field distribution so as to increase the breakdown voltage of a reverse biased semiconductor junction between the drift region and body region. This allows for higher doping of the drift region, for a given breakdown voltage when compared to conventional MOSFETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.