Thin film capacitor and method of manufacturing the same
US6853051B2 · kind B2 · utility
21Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2002 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Dec 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.