Patent · US Expired

Self-assembled nanobump array stuctures and a method to fabricate such structures

US6853075B2 · kind B2 · utility

22Cited by
31References
34Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 28, 2003
Grant dateFeb 8, 2005
Priority date
Expiry dateJan 28, 2023

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/889
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A self-assembled nanobump array structure including a semi-absorbing outer layer provided on at least one nanobump-forming substrate layer, the semi-absorbing outer layer configured to ablate slowly to allow an applied laser energy to be transmitted to the at least one nanobump-forming substrate layer, in which the self-assembled nanobump array structure is formed by an energy and a pressure buildup occurring in the at least one nanobump-forming substrate layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.