Magnetoresistance effect element
US6853520B2 · kind B2 · utility
36Cited by
10References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2001 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Nov 22, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.