Patent · US Expired

Reducing leakage current in circuits implemented using CMOS transistors

US6853574B2 · kind B2 · utility

4Cited by
6References
14Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 27, 2002
Grant dateFeb 8, 2005
Priority date
Expiry dateJul 3, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/811
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Reducing leakage current when a circuit contains a series of CMOS transistors. The probability that each input signal (connecting to the gate terminal of the corresponding CMOS transistor) will be at a logical value which turns off the corresponding CMOS transistor is determined. A CMOS transistor with a high threshold voltage may be connected to receive an input signal with a high probability to reduce the aggregate leakage current in the circuit. The approach may be used in any environments such as synthesis tools and also manual design methodologies.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.