Efficiency GaN-based light emitting devices
US6853663B2 · kind B2 · utility
3Cited by
14References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2001 |
| Grant date | Feb 8, 2005 |
| Priority date | — |
| Expiry date | Dec 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical semiconductor device having an active layer for generating light via the recombination of holes and electrons therein. The active layer is part of a plurality of semiconductor layers including an n-p junction between an n-type layer and a p-type layer. The active layer has a polarization field therein having a field direction that depends on the orientation of the active layer when the active layer is grown. In the present invention, the polarization field in the active layer has an orientation such that the polarization field is directed from the n-layer to the p-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.