Fluoropolymer interlayer dielectric by chemical vapor deposition
US6855370B2 · kind B2 · utility
0Cited by
9References
8Claims
0Family size
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Key dates
| Filing date | May 2, 2002 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Sep 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0212
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process is disclosed for forming a fluoropolymer layer on a thin film device, comprising contacting said thin film device with a gas phase fluoromonomer, and initiating polymerization of said fluoromonomer with a free radical polymerization initiator whereby said fluoromonomer polymerizes to form said fluoropolymer layer on said thin film device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.