Method of manufacturing a tunnel magneto-resistance based magnetic memory device
US6855563B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 22, 2003 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Apr 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
In a method of manufacturing a magnetic memory device comprising a writing word line (first wiring) and a bit line (second wiring) three-dimensionally orthogonally intersecting therewith, with a TMR device therebetween, a first mask to be a mask shape for the TMR device is formed, the TMR device is formed by use of the first mask as a mask, thereafter a second mask to be used for forming a wiring for connecting the TMR device to a wiring on the lower side thereof is formed while causing at least a part of the second mask to overlap with the first mask so that the first mask becomes a mask at one end side of the wiring, and a connection wiring for connecting the TMR device to the wiring on the lower side thereof is formed by use of the first and second masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.