Process to pattern thick TiW metal layers using uniform and selective etching
US6855638B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2003 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Mar 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method processes a thick TiW metal layer (12) on a dielectric layer (15), where the dielectric layer (15) has been deposited on a substrate (14), such as a silicon substrate. The method deposits the TiW metal layer (12) onto the dielectric layer (15), such as silicon dioxide or silicon nitride, and then deposits a photoresist (10) over the TiW metal layer (12). The method removes substantially all of the TiW metal layer (12) not in contact with the photoresist (10) with a uniform etch, such as not more than 80% to 90% of the deposited TiW metal layer. Then, the TiW metal layer (12) is selectively etched to the dielectric layer (15), to remove the TiW metal layer (12) faster than the dielectric layer (15), such as 2.7 times faster.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.