Semiconductor device and method of manufacture thereof
US6856018B2 · kind B2 · utility
1Cited by
4References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2001 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Dec 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to form an aluminum system wiring that does not peel off on an insulating film containing fluorine and to improve the reliability thereof, a semiconductor device according to the present invention includes an insulating film (14) containing fluorine formed on a substrate (11), a titanium aluminum alloy film (17a) formed on the insulating film (14) containing fluorine, and a metallic film (17b) comprising aluminum or an aluminum alloy formed on the titanium aluminum alloy film (17a).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.