Semiconductor device and method of manufacturing semiconductor device
US6856023B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2003 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Jan 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device of the present invention comprises a substrate; at least one through hole formed through the substrate between front and back surfaces of the substrate; an electrical connection portion formed by a semiconductor process on at least one surface of the front and back surfaces of the substrate in a vicinity of an end opening of the through hole; an insulating layer formed of an organic material on an inside surface of the through hole; and an electroconductive layer formed on an inside surface of the insulating layer, wherein the electrical connection portion is electrically connected to the electroconductive layer to be electrically connected to a side of the other surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.