Direct, low frequency capacitance measurement for scanning capacitance microscopy
US6856145B2 · kind B2 · utility
6Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2002 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Jan 5, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/866
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system and method for measuring capacitance between a probe and a semiconductor sample, which may be useful in the field of scanning capacitance microscopy (SCM). The present invention also includes a method for analyzing measured capacitance data by subtracting any changes in capacitance that are due to changes in long-range stray capacitance that occur when the probe assembly is scanned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.