Contactless optical probe for use in semiconductor processing metrology
US6856159B1 · kind B1 · utility
21Cited by
11References
81Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2000 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Mar 15, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/311
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and/or device (285) for determining first and second band offsets (100, 110) at a semiconductor/dielectric heterointerface (115), which includes the semiconductor/dielectric heterointerface (115) exposed to incident photons (205) from a light source (200); a detector (275, 280) for generating a signal by detecting emitted photons (260, 265) from the semiconductor/dielectric heterointerface (115); and an element (310) for changing the energy of incident photons (205) to monitor the first and second band offsets (100, 110).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.