Delta Vgs curvature correction for bandgap reference voltage generation
US6856189B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 29, 2003 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | May 29, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/30
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A bandgap voltage reference generator may include a BJT (Bipolar Junction Transistor) and a pair of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) coupled to the BJT. The base-emitter voltage Vbe of the BJT may exhibit a non-linearity with respect to temperature. The difference between gate-source voltages of the pair of MOSFETs exhibits an opposite non-linearity with respect to temperature. The opposite non-linearity reduces the effect of the non-linearity on the output voltage of the bandgap voltage reference generator. The difference in gate-source voltages of the pair of MOSFETs may be determined by the ratio of channel width to channel length of each MOSFET included in the pair of MOSFETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.