Surface light emitting type semiconductor laser having a vertical cavity
US6856635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2002 |
| Grant date | Feb 15, 2005 |
| Priority date | — |
| Expiry date | Oct 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0683
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A lower multilayer reflection film (2), a light emitting layer forming portion (6) and an upper multilayer reflection film (8) are sequentially formed on a substrate (1) to form a semiconductor laminated portion (9), and a current injection region A is formed at a part of the semiconductor laminated portion so as to emit light from the surface in the center thereof. And, according to the present invention, the current injection region A is formed so as to be deflected from a center of the substrate. As a result, there is provided a surface light emitting type semiconductor laser capable of monitoring a light emitting power correctly and controlling it automatically in order to achieve the constant light emitting power in a case where the surface light emitting type laser chip is used as a light source for a pickup or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.