Gated fabrication of nanostructure field emission cathode material within a device
US6858455B2 · kind B2 · utility
29Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2002 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | May 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30469
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Gated field emission devices and systems and methods for their fabrication are described. A method includes growing a substantially vertically aligned carbon nanostructure, the substantially vertically aligned carbon nanostructure coupled to a substrate; covering at least a portion of the substantially vertically aligned carbon nanostructure with a dielectric; forming a gate, the gate coupled to the dielectric; and releasing the substantially vertically aligned carbon nanostructure by forming an aperture in the gate and removing a portion of the dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.