SOI annealing method
US6858508B2 · kind B2 · utility
4Cited by
11References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 20, 2003 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Jul 30, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for annealing an SOI in which two annealing steps are followed by a cooling step. During the second annealing step, the annealing temperature is from 993° C. to the melting point of silicon. During the cooling step, the cooling rate is not less than 0.12° C./sec when a temperature is from 993° C. to 775° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.